Modeling of Diffusion and Incorporation of Interstitial Oxygen Ions at the TiN/SiO2 Interface-Reference-Cited by-同舟云学术

Modeling of Diffusion and Incorporation of Interstitial Oxygen Ions at the TiN/SiO2 Interface

Published:2019-09-06 Issue:39 Volume:11 Page:36232-36243
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Cottom Jonathon^ORCID,Bochkarev Anton¹,Olsson Emilia,Patel Kamal²,Munde Manveer²,Spitaler Jürgen³,Popov Maxim N.³,Bosman Michel²,Shluger Alexander L.

Affiliation:

1. LITEN, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9, France

2. Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore 138634, Singapore

3. Materials Center Leoben Forschung GmbH (MCL), Roseggerstraße 12, A-8700 Leoben, Austria

Funder

Engineering and Physical Sciences Research Council

Leverhulme Trust

?sterreichische Forschungsf?rderungsgesellschaft

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.9b10705

Reference81 articles.

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