Infrared Photodetector Based on the Photothermionic Effect of Graphene-Nanowall/Silicon Heterojunction-Reference-Cited by-同舟云学术

Infrared Photodetector Based on the Photothermionic Effect of Graphene-Nanowall/Silicon Heterojunction

Published:2019-04-22 Issue:19 Volume:11 Page:17663-17669
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Liu Xiangzhi¹²,Zhou Quan¹³,Luo Shi¹,Du Haiwei¹,Cao Zhensong⁴,Peng Xiaoyu¹,Feng Wenlin²,Shen Jun¹^ORCID,Wei Dapeng¹^ORCID

Affiliation:

1. Chongqing Key Laboratory of Multi-scale Manufacturing Technology, Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Sciences, Chongqing 400714, P. R. China

2. Department of Applied Physics, Chongqing University of Technology, Chongqing 400054, P. R. China

3. China Aerodynamics Research and Development Center, Mianyang 621000, P. R. China

4. Key Laboratory of Atmospheric Optics, Chinese Academy of Sciences, Hefei 230031, P. R. China

Funder

Chongqing Science and Technology Commission

Youth Innovation Promotion Association of the Chinese Academy of Sciences

National Natural Science Foundation of China

Chinese Academy of Sciences

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.9b03329

Reference39 articles.

1. Infrared Detectors for the Future

2. State-of-the-art photodetectors for optoelectronic integration at telecommunication wavelength

3. Dual-gated bilayer graphene hot-electron bolometer

4. 1040 X 1040 infrared charge sweep device imager with PtSi Schottky-barrier detectors

5. Plasmon-induced hot carrier science and technology

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