Ultralow-Noise Organic Transistors Based on Polymeric Gate Dielectrics with Self-Assembled Modifiers-Reference-Cited by-同舟云学术

Ultralow-Noise Organic Transistors Based on Polymeric Gate Dielectrics with Self-Assembled Modifiers

Published:2019-10-09 Issue:44 Volume:11 Page:41561-41569
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Kondo Masaya¹²³^ORCID,Uemura Takafumi¹³,Ishiwari Fumitaka⁴^ORCID,Kajitani Takashi⁴,Shoji Yoshiaki⁴^ORCID,Morita Masato⁴,Namba Naoko³,Inoue Yumi¹,Noda Yuki¹,Araki Teppei¹²³,Fukushima Takanori⁴^ORCID,Sekitani Tsuyoshi¹²³^ORCID

Affiliation:

1. The Institute of Scientific and Industrial Research, Osaka University, 8-1, Mihogaoka, Ibaraki, Osaka 567-0047, Japan

2. Graduate School of Engineering, Osaka University, 2-1, Yamada-oka, Suita, Osaka 565-0871, Japan

3. Advanced Photonics and Biosensing Open Innovation Laboratory, National Institute of Advanced Industrial Science and Technology, Photonics Center P3 Bldg. 2-1, Yamadaoka, Suita, Osaka 565-0871, Japan

4. Laboratory for Chemistry and Life Science, Institute of Innovative Research, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan

Funder

New Energy and Industrial Technology Development Organization

Ministry of Education, Culture, Sports, Science and Technology

Japan Society for the Promotion of Science

Japan Science and Technology Agency

National Institute for Materials Science

National Institute of Advanced Industrial Science and Technology

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

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