High-Performance Flexible Graphene Field Effect Transistors with Ion Gel Gate Dielectrics-Reference-Cited by-同舟云学术

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High-Performance Flexible Graphene Field Effect Transistors with Ion Gel Gate Dielectrics

Published:2010-08-12 Issue:9 Volume:10 Page:3464-3466
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Kim Beom Joon¹,Jang Houk²³,Lee Seoung-Ki²³,Hong Byung Hee²⁴,Ahn Jong-Hyun²³,Cho Jeong Ho¹

Affiliation:

1. Department of Organic Materials and Fiber Engineering, Soongsil University, Seoul 156-743, Korea

2. SKKU Advanced Institute of Nanotechnology (SAINT) and Center for Human Interface Nano Technology (HINT)

3. School of Advanced Materials Science and Engineering

4. Department of Chemistry

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl101559n

Reference20 articles.

1. Graphene: Status and Prospects

2. Two-dimensional gas of massless Dirac fermions in graphene

3. Experimental observation of the quantum Hall effect and Berry's phase in graphene

4. Making graphene for macroelectronics

5. Large-scale pattern growth of graphene films for stretchable transparent electrodes

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