Low-Power, High-Performance, Non-volatile Inkjet-Printed HfO2-Based Resistive Random Access Memory: From Device to Nanoscale Characterization-Reference-Cited by-同舟云学术

Low-Power, High-Performance, Non-volatile Inkjet-Printed HfO2-Based Resistive Random Access Memory: From Device to Nanoscale Characterization

Published:2019-06-10 Issue:26 Volume:11 Page:23659-23666
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Vescio Giovanni¹^ORCID,Martín Gemma¹^ORCID,Crespo-Yepes Albert²,Claramunt Sergi²,Alonso Daniel²,López-Vidrier Julian³,Estradé Sonia¹,Porti Marc²,Rodríguez Rosana²,Peiró Francesca⁴,Cornet Albert¹,Cirera Albert⁴,Nafría Montserrat²

Affiliation:

1. MIND, Electronic and Biomedical Engineering Department, Universitat de Barcelona, 08028 ,Barcelona Spain

2. Electronic Engineering Department, Universitat Autònoma de Barcelona, 08193 Barcelona, Spain

3. IMTEK, Faculty of Engineering, Albert-Ludwigs-Universität Freiburg, 79110 Freiburg, Germany

4. Institute of Nanoscience and Nanotechnology (IN2UB), Universitat de Barcelona, 08028 Barcelona, Spain

Funder

European Regional Development Fund

Ministerio de Econom?a y Competitividad

Ministerio de Educaci?n, Cultura y Deporte

Generalitat de Catalunya

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.9b01731

Reference57 articles.

1. The Internet of Things

2. Smart objects as building blocks for the Internet of things

3. Evaluation of Aerosol, Superfine Inkjet, and Photolithography Printing Techniques for Metallization of Application Specific Printed Electronic Circuits

4. Materials and Applications for Large Area Electronics: Solution-Based Approaches

5. Organic materials for printed electronics

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