Consistently High Voc Values in p-i-n Type Perovskite Solar Cells Using Ni3+-Doped NiO Nanomesh as the Hole Transporting Layer-Reference-Cited by-同舟云学术

Consistently High Voc Values in p-i-n Type Perovskite Solar Cells Using Ni3+-Doped NiO Nanomesh as the Hole Transporting Layer

Published:2020-01-06 Issue:10 Volume:12 Page:11467-11478
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Thakur Ujwal K.¹,Kumar Pawan¹^ORCID,Gusarov Sergey²,Kobryn Alexander E.²,Riddell Saralyn¹,Goswami Ankur³^ORCID,Alam Kazi M.¹,Savela Spencer¹,Kar Piyush¹,Thundat Thomas⁴^ORCID,Meldrum Alkiviathes⁵^ORCID,Shankar Karthik¹

Affiliation:

1. Department of Electrical and Computer Engineering, University of Alberta, 9211-116 St, Edmonton, Alberta T6G 1H9, Canada

2. Nanotechnology Research Centre, National Research Council Canada, 11421 Saskatchewan Drive, Edmonton, Alberta T6G 2M9, Canada

3. Department of Materials Science and Engineering, Indian Institute of Technology, Hauz Khas, New Delhi 11016, India

4. Department of Chemical and Biological Engineering, University at Buffalo, The State University of New York, Buffalo, New York 14260-4200, United States

5. Department of Physics, University of Alberta, Edmonton, Alberta T6G 2E1, Canada

Funder

National Research Council Canada

Canada Foundation for Innovation

Canada First Research Excellence Fund

Natural Sciences and Engineering Research Council of Canada

Alberta Innovates

CMC Microsystems

Publisher

American Chemical Society (ACS)

Subject

General Materials Science