Flexible, Temperature-Resistant, and Fatigue-Free Ferroelectric Memory Based on Bi(Fe0.93Mn0.05Ti0.02)O3 Thin Film
Author:
Affiliation:
1. Institute for Superconducting and Electronic Materials, Australian Institute for Innovative Materials, University of Wollongong, Innovation Campus, North Wollongong, NSW 2500, Australia
Funder
Australian Research Council
National Natural Science Foundation of China
Natural Science Foundation of Shandong Province
Shandong provincial key research and development plan
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.9b01464
Reference37 articles.
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