Barrier Formation at the Contacts of Vanadium Dioxide and Transition-Metal Dichalcogenides-Reference-Cited by-同舟云学术

Barrier Formation at the Contacts of Vanadium Dioxide and Transition-Metal Dichalcogenides

Published:2019-09-17 Issue:40 Volume:11 Page:36871-36879
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Yamamoto Mahito¹^ORCID,Nouchi Ryo²³^ORCID,Kanki Teruo¹,Nakaharai Shu⁴,Hattori Azusa N.¹^ORCID,Watanabe Kenji⁴,Taniguchi Takashi⁴,Wakayama Yutaka⁴^ORCID,Ueno Keiji⁵,Tanaka Hidekazu¹

Affiliation:

1. Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan

2. Graduate School of Engineering, Osaka Prefecture University, Sakai, Osaka 599-8570, Japan

3. JST PRESTO, Kawaguchi, Saitama 332-0012, Japan

4. National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan

5. Department of Chemistry, Graduate School of Science and Engineering, Saitama University, Saitama 338-8570, Japan

Funder

Ministry of Education, Culture, Sports, Science and Technology

Yazaki Memorial Foundation for Science and Technology

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.9b13763

Reference60 articles.

1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides

2. Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides

3. Electrical contacts to two-dimensional semiconductors

4. Contacts between Two- and Three-Dimensional Materials: Ohmic, Schottky, and p–n Heterojunctions

5. Contact engineering for 2D materials and devices

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