Contact engineering for 2D materials and devices-Reference-Cited by-同舟云学术

Contact engineering for 2D materials and devices

Published:2018 Issue:9 Volume:47 Page:3037-3058
ISSN:0306-0012
Container-title:Chemical Society Reviews
language:en
Short-container-title:Chem. Soc. Rev.

Author:

Schulman Daniel S.¹²³⁴^ORCID,Arnold Andrew J.⁵²³⁴^ORCID,Das Saptarshi⁶²³⁴^ORCID

Affiliation:

1. Materials Science and Engineering

2. Pennsylvania State University

3. University Park

4. USA

5. Electrical Engineering

6. Engineering Science and Mechanics

Abstract

Over the past decade, the field of two-dimensional (2D) layered materials has surged, promising a new platform for studying diverse physical phenomena that are scientifically intriguing and technologically relevant.

Funder

National Science Foundation

Semiconductor Research Corporation

Air Force Office of Scientific Research

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/CS/C7CS00828G

Reference134 articles.

1. Moore's law: past, present and future

2. Device scaling limits of Si MOSFETs and their application dependencies

3. E. Yu , L.Chang , S.Ahmed , H.Wang , S.Bell , C.-Y.Yang , C.Tabery , C.Ho , Q.Xiang and T.-J.King , presented in part at the Electron Devices Meeting, 2002. IEDM'02. International, 2002

4. How Good Can Monolayer MoS2 Transistors Be?

5. On Monolayer ${\rm MoS}_{2}$ Field-Effect Transistors at the Scaling Limit

Cited by 618 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Knowledge-reused transfer learning for molecular and materials science;Journal of Energy Chemistry;2024-11

2. Unlocking the potential of Mg-ion batteries: Cu2C MXene anode with ultrahigh storage and energy density with rapid Mg diffusion;Chemical Engineering Journal;2024-10

3. Exploring charge transfer and schottky barrier modulation at monolayer Ge₂Sb₂Te₅-metal interfaces;Journal of Physics: Condensed Matter;2024-09-13

4. Contact Properties on a Semiconducting MoTe₂ Crystal Using Polymorphic Structures;ACS Applied Electronic Materials;2024-09-10

5. Role of electrostatic doping on the resistance of metal and two-dimensional materials edge contacts;Physical Review Research;2024-09-10