Coherent Epitaxial Semiconductor–Ferromagnetic Insulator InAs/EuS Interfaces: Band Alignment and Magnetic Structure-Reference-Cited by-同舟云学术

Coherent Epitaxial Semiconductor–Ferromagnetic Insulator InAs/EuS Interfaces: Band Alignment and Magnetic Structure

Published:2019-12-26 Issue:7 Volume:12 Page:8780-8787
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Liu Yu¹,Luchini Alessandra^ORCID,Martí-Sánchez Sara²,Koch Christian²,Schuwalow Sergej¹,Khan Sabbir A.¹^ORCID,Stankevič Tomaš¹,Francoual Sonia³,Mardegan Jose R. L.³,Krieger Jonas A.⁴,Strocov Vladimir N.⁴,Stahn Jochen⁴,Vaz Carlos A. F.⁴^ORCID,Ramakrishnan Mahesh⁴,Staub Urs⁴,Lefmann Kim,Aeppli Gabriel⁴⁵⁶,Arbiol Jordi²⁷^ORCID,Krogstrup Peter¹^ORCID

Affiliation:

1. Microsoft Quantum Materials Lab Copenhagen, 2800 Lyngby, Denmark

2. Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, 08193 Barcelona, Catalonia, Spain

3. Deutsches Elektronen-Synchrotron DESY, Hamburg 22603, Germany

4. Paul Scherrer Institute, CH-5232 Villigen, Switzerland

5. ETH, CH-8093 Zürich, Switzerland

6. EPFL, CH-1015 Lausanne, Switzerland

7. ICREA, Pg. Lluís Companys 23, 08010 Barcelona, Catalonia, Spain

Funder

Schweizerischer Nationalfonds zur F?rderung der Wissenschaftlichen Forschung

Microsoft

Ministerio de Econom?a y Competitividad