Spatial Nonuniformity in Resistive-Switching Memory Effects of NiO-Reference-Cited by-同舟云学术

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Spatial Nonuniformity in Resistive-Switching Memory Effects of NiO

Published:2011-07-22 Issue:32 Volume:133 Page:12482-12485
ISSN:0002-7863
Container-title:Journal of the American Chemical Society
language:en
Short-container-title:J. Am. Chem. Soc.

Author:

Oka Keisuke¹,Yanagida Takeshi¹²,Nagashima Kazuki¹,Kanai Masaki¹,Kawai Tomoji¹³,Kim Jin-Soo³,Park Bae Ho³

Affiliation:

1. Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka Ibaraki, Osaka 567-0047, Japan

2. PRESTO, Japan Science and Technology Agency, 4-1-8 Honcho Kawaguchi, Saitama 332-0012, Japan

3. Division of Quantum Phases and Devices, Department of Physics, Konkuk University, Seoul 143-701, Korea

Publisher

American Chemical Society (ACS)

Subject

Colloid and Surface Chemistry,Biochemistry,General Chemistry,Catalysis

Link

https://pubs.acs.org/doi/pdf/10.1021/ja206063m

Reference44 articles.

1. The missing memristor found

2. Memristive switching mechanism for metal/oxide/metal nanodevices

3. ‘Memristive’ switches enable ‘stateful’ logic operations via material implication

4. Write Current Reduction in Transition Metal Oxide Based Resistance Change Memory

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1. Investigation of Vacancies Transport in the Bilayer of the Cu₂O_1–x/CuO_1–y Resistive Switching Device and Effect of Growth Temperature on Memristive Switching;ACS Applied Electronic Materials;2023-12-12

2. Symmetric bipolar resistive switching in copper oxide nanostructure/ITO lateral device under exposure to atmospheric oxygen and application in artificial synaptic devices;Materials Today Communications;2023-12

3. Origin and Mechanism of Piezoelectric and Photovoltaic Effects in (111) Polar Orientated NiO Films;Advanced Science;2023-09-26

4. Binary metal oxide-based resistive switching memory devices: A status review;Materials Today Communications;2023-03

5. Graphene oxide-based random access memory: from mechanism, optimization to application;Journal of Physics D: Applied Physics;2022-12-12

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