Stopping and Resuming at Will the Growth of GaAs Nanowires-Reference-Cited by-同舟云学术

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Stopping and Resuming at Will the Growth of GaAs Nanowires

Published:2013-08-16 Issue:9 Volume:13 Page:3976-3984
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Priante G.¹,Ambrosini S.¹²³⁴,Dubrovskii V. G.³⁵,Franciosi A.¹²⁶,Rubini S.¹

Affiliation:

1. Istituto Officina dei Materiali CNR, Laboratorio TASC, S.S. 14 km 163.5, I-34149 Trieste, Italy

2. Università di Trieste, Dipartimento di Fisica, Via Valerio 2, I-34127 Trieste, Italy

3. St. Petersburg Academic University, Khlopina 8/3, 194021 St. Petersburg, Russia

4. Durham University, Stockton Road, Durham DH1 3L, U.K.

5. Ioffe Physical Technical Institute of the Russian Academy of Sciences, Politekhnicheskaya 26, 194021 St. Petersburg, Russia

6. Sincrotrone Trieste S.C.p.A., Elettra Laboratory, S.S. 14 km 163.5, I-34149 Trieste, Italy

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cg400701w

Reference51 articles.

1. VAPOR‐LIQUID‐SOLID MECHANISM OF SINGLE CRYSTAL GROWTH

2. Direct Imaging of Single Au Atoms Within GaAs Nanowires

3. Catalyst-free selective-area MOVPE of semiconductor nanowires on (111)B oriented substrates

4. Mechanism of catalyst-free growth of GaAs nanowires by selective area MOVPE

5. Control of InAs Nanowire Growth Directions on Si

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