High-Performance Devices Based on InSe–In1–xGaxSe Van der Waals Heterojunctions-Reference-Cited by-同舟云学术

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High-Performance Devices Based on InSe–In1–xGaxSe Van der Waals Heterojunctions

Published:2020-05-07 Issue:22 Volume:12 Page:24978-24983
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Yu Miaomiao¹,Hu Yunxia²,Gao Feng²,Dai Mingjin²^ORCID,Wang Lifeng³,Hu PingAn²^ORCID,Feng Wei¹^ORCID

Affiliation:

1. College of Chemistry, Chemical Engineering and Resource Utilization, Northeast Forestry University, Harbin 150040, China

2. School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150080, China

3. Institute for Frontier Materials, Deakin University, 75 Pigdons Road, Waurn Ponds, Geelong, Victoria 3216, Australia

Funder

China Postdoctoral Science Foundation

National Natural Science Foundation of China

Heilongjiang Postdoctoral Special Fund

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.0c03206

Reference44 articles.

1. Photodetectors based on graphene, other two-dimensional materials and hybrid systems

2. Scanning Photocurrent Imaging and Electronic Band Studies in Silicon Nanowire Field Effect Transistors

3. Intersublevel Infrared Photodetector with Strain-Free GaAs Quantum Dot Pairs Grown by High-Temperature Droplet Epitaxy

4. Huyghebaert, C.; Schram, T.; Smets, Q.; Agarwal, T. K.; Verreck, D.; Brems, S.; Phommahaxay, A.; Chiappe, D.; Kazzi, S. E.; Rosa, C. L. d.; Arutchelvan, G.; Cott, D.; Ludwig, J.; Gaur, A.; Sutar, S.; Leonhardt, A.; Marinov, D.; Lin, D.; Caymax, M.; Asselberghs, I.; Pourtois, G.; Radu, I. P. In 2D Materials: Roadmap to Cmos Integration, IEEE International Electron Devices Meeting (IEDM), Dec 1–5, 2018; pp 22.1.1–22.1.4.

5. Progress, Challenges, and Opportunities for 2D Material Based Photodetectors

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1. Preparation of In_0.5Sn_0.5Se Crystal via a Zone Melting Method and Evaluation of its Thermoelectric Properties;Crystal Research and Technology;2024-05-30

2. PtTe₂/WS₂/Pyramidal-Si van der Waals Heterojunction with Semiconformal Interfaces toward High-Performance Photodetectors;ACS Photonics;2024-04-04

3. Growth and Characterization of Large-size InSe Crystal from Non-stoichiometric Solution via a Zone Melting Method;Journal of Inorganic Materials;2024

4. Research progress on two-dimensional indium selenide crystals and optoelectronic devices;Journal of Materials Chemistry A;2024

5. Vertical Van Der Waals Epitaxy of p‐Mo_xRe_1‐_Xs₂ on GaN for Ultrahigh Detectivity Uv–vis–NIR Photodetector;Advanced Optical Materials;2023-12-31

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