Improving Bias-Stress Stability of p-Type Organic Field-Effect Transistors by Constructing an Electron Injection Barrier at the Drain Electrode/Semiconductor Interfaces
Author:
Affiliation:
1. Department of Physics, Yunnan University, Kunming 650091, China
2. Department of Materials Science and Engineering, University of Toronto, Toronto M5S 3E4, Canada
Funder
National Natural Science Foundation of China
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/acsami.0c12188
Reference48 articles.
1. High-Performance Near-Infrared Phototransistor Based on n-Type Small-Molecular Organic Semiconductor
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3. Realization of an Ultrasensitive and Highly Selective OFET NO2 Sensor: The Synergistic Combination of PDVT-10 Polymer and Porphyrin–MOF
4. Separation in the Roles of Carrier Transport and Light Emission in Light-Emitting Organic Transistors with a Bilayer Configuration
5. Organic Transistor Nonvolatile Memory with Three-Level Information Storage and Optical Detection Functions
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