Role of ALD Al2O3 Surface Passivation on the Performance of p-Type Cu2O Thin Film Transistors-Reference-Cited by-同舟云学术

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Role of ALD Al2O3 Surface Passivation on the Performance of p-Type Cu2O Thin Film Transistors

Published:2021-01-14 Issue:3 Volume:13 Page:4156-4164
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Napari Mari¹^ORCID,Huq Tahmida N.¹,Meeth David J.²,Heikkilä Mikko J.³,Niang Kham M.²,Wang Han⁴^ORCID,Iivonen Tomi³^ORCID,Wang Haiyan⁴^ORCID,Leskelä Markku³^ORCID,Ritala Mikko³^ORCID,Flewitt Andrew J.²^ORCID,Hoye Robert L. Z.¹^ORCID,MacManus-Driscoll Judith L.¹

Affiliation:

1. Department of Materials Science and Metallurgy, University of Cambridge, Cambridge CB3 0FS, U.K.

2. Electrical Engineering Division, Department of Engineering, University of Cambridge, Cambridge CB3 0FA, U.K.

3. Department of Chemistry, University of Helsinki, Helsinki FI-00014, Finland

4. School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, United States

Funder

Engineering and Physical Sciences Research Council

Royal Academy of Engineering

Division of Materials Research

PragmatIC Ltd.

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.0c18915

Reference51 articles.

1. Hosono, H. Handbook of Visual Display Technology; Chen, J., Cranton, W., Fihn, M., Eds. Springer Berlin Heidelberg: Berlin, Heidelberg, 2012; pp 729–749.

2. Amorphous IGZO TFT with High Mobility of ∼70 cm2/(V s) via Vertical Dimension Control Using PEALD

3. Recent Developments in p-Type Oxide Semiconductor Materials and Devices

4. The p-type conduction mechanism in Cu2O: a first principles study

5. A review of recent advances in transparent p-type Cu2O-based thin film transistors

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