Back-Channel Defect Termination by Sulfur for p-Channel Cu2O Thin-Film Transistors-Reference-Cited by-同舟云学术

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Back-Channel Defect Termination by Sulfur for p-Channel Cu2O Thin-Film Transistors

Published:2020-11-04 Issue:46 Volume:12 Page:51581-51588
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Chang Hsuan¹,Huang Chi-Hsin¹^ORCID,Matsuzaki Kosuke²^ORCID,Nomura Kenji¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, University of California San Diego, 9500 German Dr., La Jolla, California 92093, United States

2. Materials Research Center for Element Strategy, Tokyo Institute of Technology, 4259 Nagatuta 4259, Midori, Yokohama 226-8503, Japan

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.0c11534

Reference50 articles.

1. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

2. Metal oxide semiconductor thin-film transistors for flexible electronics

3. A Review of Low‐Temperature Solution‐Processed Metal Oxide Thin‐Film Transistors for Flexible Electronics

4. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors

5. Lee, J.h.; Kim, D.h.; Yang, D.j.; Hong, S.y.; Yoon, K.s.; Hong, P.s.; Jeong, C.o.; Park, H. S.; Kim, S. Y.; Lim, S. K. In 42.2: World’s Largest (15-inch) XGA AMLCD Panel using IGZO Oxide TFT. SID Symposium Digest of Technical Papers; Wiley Online Library, 2008; pp 625–628.

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3. Effects of solution processable CuI thin films with Al₂O₃-based sandwiched architecture for high-performance p-type transistor applications;Journal of Materials Chemistry C;2024

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