Earth-Abundant Fe–Al–Si Thermoelectric (FAST) Materials: from Fundamental Materials Research to Module Development-Reference-Cited by-同舟云学术

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Earth-Abundant Fe–Al–Si Thermoelectric (FAST) Materials: from Fundamental Materials Research to Module Development

Published:2020-10-15 Issue:43 Volume:12 Page:48804-48810
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Takagiwa Yoshiki¹^ORCID,Ikeda Teruyuki²,Kojima Hiroyasu³

Affiliation:

1. National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan

2. Department of Materials Science and Engineering, Ibaraki University, 4-12-1, Nakanarusawa, Hitachi, Ibaraki 316-8511, Japan

3. Aisin Seiki Co. Ltd., 2-1 Asahi-cho, Kariya, Aichi 448-8650, Japan

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

http://pubs.acs.org/doi/pdf/10.1021/acsami.0c15063

Reference26 articles.

1. Energy Harvesting Sensor Nodes: Survey and Implications

2. Small-scale energy harvesting through thermoelectric, vibration, and radiofrequency power conversion

3. A Review on Low-Grade Thermal Energy Harvesting: Materials, Methods and Devices

4. Bismuth Telluride and Its Alloys as Materials for Thermoelectric Generation

5. Manipulation of ionized impurity scattering for achieving high thermoelectric performance in n-type Mg3Sb2-based materials

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Melt growth of crystalline α-SrSi2 by the vertical Bridgman method and its thermoelectric characteristics;Journal of Crystal Growth;2024-11

2. Achieving Compatible p/n-Type Half-Heusler Compositions in Valence Balanced/Unbalanced Mg_1–xV_xNiSb;ACS Applied Materials & Interfaces;2024-02-26

3. Effect of Off-Stoichiometry and Point Defects on Thermoelectric Properties of a W-Substituted Fe₂VAl Heusler Compound;ACS Applied Energy Materials;2023-08-01

4. Thermoelectric performance of Fe₂V_0.9W_0.1Al thin films deposited on n-type Si substrates;Japanese Journal of Applied Physics;2023-05-01

5. Effect of carrier doping on the electronic states of earth-abundant Fe–Al–Si thermoelectric materials;Materials Research Express;2023-05-01

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