A Vacuum Ultraviolet-Enhanced Oxidation Mechanism for Pd: Near-Surface Oxidation for Atomic Layer Etching-Reference-Cited by-同舟云学术

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A Vacuum Ultraviolet-Enhanced Oxidation Mechanism for Pd: Near-Surface Oxidation for Atomic Layer Etching

Published:2020-10-29 Issue:45 Volume:12 Page:50985-50995
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Coffey Brennan M.¹,Nallan Himamshu C.¹,Engstrom James R.²^ORCID,Ekerdt John G.¹^ORCID

Affiliation:

1. McKetta Department of Chemical Engineering, The University of Texas at Austin, 200 E. Dean Keeton Ave., Austin, Texas 78712, United States

2. The Robert F. Smith School of Chemical and Biomolecular Engineering, Cornell University, Ithaca, New York 14853, United States

Funder

National Science Foundation

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.0c13898

Reference47 articles.

1. Benchmarking Heterogeneous Electrocatalysts for the Oxygen Evolution Reaction

2. DFT Prediction of Oxygen Reduction Reaction on Palladium–Copper Alloy Surfaces

3. Interfacial Contact is Required for Metal-Assisted Plasma Etching of Silicon

4. Metal-assisted chemical etching of silicon and nanotechnology applications

5. Metal-Assisted Chemical Etching of Silicon: A Review

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Plasma nitridation for atomic layer etching of Ni;Journal of Vacuum Science & Technology A;2024-01-31

2. Vacuum ultraviolet enhanced atomic layer etching of ruthenium films;Journal of Vacuum Science & Technology A;2021-01

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