Room-Temperature, Solution-Processed SiOx via Photochemistry Approach for Highly Flexible Resistive Switching Memory-Reference-Cited by-同舟云学术

Room-Temperature, Solution-Processed SiOx via Photochemistry Approach for Highly Flexible Resistive Switching Memory

Published:2020-11-24 Issue:50 Volume:12 Page:56186-56194
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Li Pengfei¹²,Wang Dan¹²,Zhang Zongbo¹^ORCID,Guo Yunlong¹^ORCID,Jiang Lang¹^ORCID,Xu Caihong¹²

Affiliation:

1. Key Laboratory of Science and Technology on High-tech Polymer Materials, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, People’s Republic of China

2. University of Chinese Academy of Sciences, Beijing 100149, People’s Republic of China

Funder

Youth Innovation Promotion Association of the Chinese Academy of Sciences

China Academy of Space Technology

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.0c16556

Reference52 articles.

1. Silk-Based Advanced Materials for Soft Electronics

2. A Strategy to Design High-Density Nanoscale Devices utilizing Vapor Deposition of Metal Halide Perovskite Materials

3. A High-Speed and Low-Power Multistate Memory Based on Multiferroic Tunnel Junctions

4. Low Power Consumption Nanofilamentary ECM and VCM Cells in a Single Sidewall of High‐Density VRRAM Arrays

5. Organic and hybrid resistive switching materials and devices

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