A High-Speed and Low-Power Multistate Memory Based on Multiferroic Tunnel Junctions-Reference-Cited by-同舟云学术

A High-Speed and Low-Power Multistate Memory Based on Multiferroic Tunnel Junctions

Published:2018-03-13 Issue:4 Volume:4 Page:1700560
ISSN:2199-160X
Container-title:Advanced Electronic Materials
language:en
Short-container-title:Adv. Electron. Mater.

Author:

Huang Weichuan¹,Zhao Wenbo¹,Luo Zhen¹,Yin Yuewei¹,Lin Yue¹,Hou Chuangming¹,Tian Bobo²,Duan Chun-Gang²,Li Xiao-Guang¹³^ORCID

Affiliation:

1. Department of Physics; CAS Key Laboratory of Strongly-coupled Quantum Matter Physics; Hefei National Laboratory for Physical Sciences at the Microscale; University of Science and Technology of China; Hefei 230026 P. R. China

2. Department of Electronic Engineering; Key Laboratory of Polar Materials and Devices; Ministry of Education; East China Normal University; Shanghai 200241 P. R. China

3. Collaborative Innovation Center of Advanced Microstructures; Nanjing 210093 P. R. China

Funder

National Natural Science Foundation of China

National Key Research and Development Program of China

Shanghai Basic Research Project

Publisher

Wiley

Subject

Electronic, Optical and Magnetic Materials

Reference41 articles.

1. Emerging Nanoscale Memory and Logic Devices: A Critical Assessment

2. Prospective of Semiconductor Memory Devices: from Memory System to Materials