Observation of 2D Conduction in Ultrathin Germanium Arsenide Field-Effect Transistors-Reference-Cited by-同舟云学术

Observation of 2D Conduction in Ultrathin Germanium Arsenide Field-Effect Transistors

Published:2020-02-26 Issue:11 Volume:12 Page:12998-13004
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Grillo Alessandro¹²^ORCID,Di Bartolomeo Antonio¹²^ORCID,Urban Francesca¹²^ORCID,Passacantando Maurizio³^ORCID,Caridad Jose M.⁴,Sun Jianbo⁴^ORCID,Camilli Luca⁴^ORCID

Affiliation:

1. Physics Department “E. R. Caianiello”, University of Salerno, via Giovanni Paolo II n. 132, Fisciano 84084, Italy

2. CNR-SPIN Salerno, via Giovanni Paolo II n. 132, Fisciano 84084, Italy

3. Department of Physical and Chemical Science, University of L’Aquila and CNR-SPIN L’Aquila, via Vetoio, L’Aquila 67100, Coppito, Italy

4. Department of Physics, Technical University of Denmark, Ørsteds Plads, 2800 Kgs. Lyngby, Denmark

Funder

Ministero dell?Istruzione, dell?Universit? e della Ricerca

Villum Fonden

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

http://pubs.acs.org/doi/pdf/10.1021/acsami.0c00348

Reference43 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Electronics based on two-dimensional materials

3. Two-dimensional materials for electronic applications

4. 2D transition metal dichalcogenides

5. Metallic MoS2 for High Performance Energy Storage and Energy Conversion

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