Effect of Twinning on the Photoluminescence and Photoelectrochemical Properties of Indium Phosphide Nanowires Grown on Silicon (111)-Reference-Cited by-同舟云学术

Effect of Twinning on the Photoluminescence and Photoelectrochemical Properties of Indium Phosphide Nanowires Grown on Silicon (111)

Published:2008-11-04 Issue:12 Volume:8 Page:4664-4669
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Woo Robyn L.¹,Xiao Rui¹,Kobayashi Yoji¹,Gao Li¹,Goel Niti¹,Hudait Mantu K.¹,Mallouk Thomas E.¹,Hicks R. F.¹

Affiliation:

1. Department of Chemical and Biomolecular Engineering, University of California, Los Angeles, California 90095, Department of Chemistry, Pennsylvania State University, University Park, Pennsylvania 16802, Intel Corporation, Santa Clara, California 95052, and Intel Corporation, Hillsboro, Oregon 97124

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl802433u

Reference30 articles.

1. Heteroepitaxial technologies of III–V on Si

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3. Growth of GaAs on Si by MOVCD

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5. The integration of III-V optoelectronics with silicon circuitry

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