Maskless Surface Patterning of AlGaInP Light-Emitting Diodes by Photochemical Laser Interference Etching
Author:
Affiliation:
1. State Key Laboratory of Crystal Materials, Shandong University, 27 South Shanda Road, Jinan, Shandong 250100, P. R. China
Publisher
American Chemical Society (ACS)
Subject
Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/jp407477h
Reference32 articles.
1. High-efficiency AlGaInP light-emitting diodes for solid-state lighting applications
2. III-nitride blue microdisplays
3. Ultrahigh spontaneous emission quantum efficiency, 99.7% internally and 72% externally, from AlGaAs/GaAs/AlGaAs double heterostructures
4. Internal quantum efficiency of high-brightness AlGaInP light-emitting devices
5. 30% external quantum efficiency from surface textured, thin‐film light‐emitting diodes
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1. Photoresistless fabrication of periodic patterns on GaAs by laser interference photochemical lithography;RSC Advances;2016
2. Integrating Surface Textures on ZnO Substrate for High Light Extraction Efficiency Light-Emitting Diode;The Journal of Physical Chemistry C;2014-06-26
3. Periodic indentation patterns fabricated on AlGaInP light emitting diodes and their effects on light extraction;RSC Adv.;2014
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