Internal quantum efficiency of high-brightness AlGaInP light-emitting devices
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2085308
Reference12 articles.
1. Very high‐efficiency semiconductor wafer‐bonded transparent‐substrate (AlxGa1−x)0.5In0.5P/GaP light‐emitting diodes
2. High brightness AlGaInP light-emitting diodes
3. Effect of indirect minima carrier population on the output characteristics of AlGaInP light-emitting diodes
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