VLS Growth of Alternating InAsP/InP Heterostructure Nanowires for Multiple-Quantum-Dot Structures
Author:
Affiliation:
1. NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato- Wakamiya, Atsugi, Kanagawa 243-0198, Japan
Publisher
American Chemical Society (ACS)
Subject
Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering
Link
https://pubs.acs.org/doi/pdf/10.1021/nl300482n
Reference20 articles.
1. Vertical Enhancement-Mode InAs Nanowire Field-Effect Transistor With 50-nm Wrap Gate
2. Semiconductor nanowire laser and nanowire waveguide electro-optic modulators
3. Nanowire Nanosensors for Highly Sensitive and Selective Detection of Biological and Chemical Species
4. Bending at Thinned GaAs Nodes in GaP-based Free-standing Nanowires
5. Flat-Top and Stacking-Fault-Free GaAs-Related Nanopillars Grown on Si Substrates
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