Band Gap Engineering of Chemical Vapor Deposited Graphene by in Situ BN Doping

Author:

Chang Cheng-Kai1,Kataria Satender1,Kuo Chun-Chiang1,Ganguly Abhijit,Wang Bo-Yao23,Hwang Jeong-Yuan,Huang Kay-Jay4,Yang Wei-Hsun5,Wang Sheng-Bo6,Chuang Cheng-Hao23,Chen Mi4,Huang Ching-I,Pong Way-Faung2,Song Ker-Jar1,Chang Shoou-Jinn6,Guo Jing-Hua3,Tai Yian5,Tsujimoto Masahiko7,Isoda Seiji8,Chen Chun-Wei,Chen Li-Chyong,Chen Kuei-Hsien1

Affiliation:

1. Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, 10617, Taiwan

2. Department of Physics, Tamkang University, Tamsui, 251, Taiwan

3. Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States

4. Department of Chemical and Materials Engineering, Minghsin University of Science and Technology, Hsinchu, 30401, Taiwan

5. Department of Chemical Engineering, National Taiwan University of Science and Technology, Taipei, 10607, Taiwan

6. Institute of Microelectronics and Department of Electrical Engineering, National Cheng Kung University, Tainan, 70101, Taiwan

7. Institute for Chemical Research, Kyoto University, Kyoto 611-0011, Japan

8. Institute for Integrated Cell-Material Sciences, Kyoto Universty, Kyoto 606-8501, Japan

Publisher

American Chemical Society (ACS)

Subject

General Physics and Astronomy,General Engineering,General Materials Science

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