Orientation Control of Large-Grained Si Films on Insulators by Thickness-Modulated Al-Induced Crystallization-Reference-Cited by-同舟云学术

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Orientation Control of Large-Grained Si Films on Insulators by Thickness-Modulated Al-Induced Crystallization

Published:2013-03-21 Issue:4 Volume:13 Page:1767-1770
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Numata Ryohei¹,Toko Kaoru¹,Saitoh Noriyuki²,Yoshizawa Noriko²,Usami Noritaka³,Suemasu Takashi¹

Affiliation:

1. Institute of Applied Physics, University of Tsukuba, Tsukuba, Ibaraki 305-8573, Japan

2. Electron Microscope Facility, IBEC Innovation Platform, AIST, 16-1 Onogawa, Tsukuba 305-8569, Japan

3. Institute for Materials Research, Tohoku University, Sendai, Miyagi 980-8577, Japan

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cg4000878

Reference30 articles.

1. Excimer laser-induced temperature field in melting and resolidification of silicon thin films

2. Surface nucleation of the (111) plane of excimer laser annealed Si on SiO2 substrates: A molecular dynamics study

3. Polycrystalline silicon thin-film transistors on quartz fiber

4. Light trapping and reflection control in solar cells using tilted crystallographic surface textures

5. Diameter-Dependent Growth Direction of Epitaxial Silicon Nanowires

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1. Evaluation of chemical structure and Si segregation of Al/Si(111);Japanese Journal of Applied Physics;2023-02-09

2. Layer exchange synthesis of multilayer graphene;Nanotechnology;2021-09-02

3. Metal-induced layer exchange of group IV materials;Journal of Physics D: Applied Physics;2020-06-29

4. Fabrication of polycrystalline silicon thin films from a-SiOx via the inverted aluminum-induced layer exchange process;Materials Letters;2020-02

5. Research Progress on Fundamentals and Applications of Metal-Induced Crystallization;ACTA METALL SIN;2020

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