van der Waals Epitaxy of InAs Nanowires Vertically Aligned on Single-Layer Graphene-Reference-Cited by-同舟云学术

van der Waals Epitaxy of InAs Nanowires Vertically Aligned on Single-Layer Graphene

Published:2012-02-14 Issue:3 Volume:12 Page:1431-1436
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Hong Young Joon¹,Lee Wi Hyoung²,Wu Yaping²,Ruoff Rodney S.²,Fukui Takashi¹

Affiliation:

1. Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University, Sapporo 060-8628, Japan

2. Department of Mechanical Engineering and the Materials Science and Engineering Program, The University of Texas at Austin, Austin, Texas 78712, United States

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl204109t

Reference28 articles.

1. A role for graphene in silicon-based semiconductor devices

2. Atomic layers of hybridized boron nitride and graphene domains

3. Vertical Pillar-Superlattice Array and Graphene Hybrid Light Emitting Diodes

4. Fully Rollable Transparent Nanogenerators Based on Graphene Electrodes

5. Vertically aligned ZnO nanostructures grown on graphene layers

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