Influence of the Device Structure on the Electrical and Photodetector Properties of n-MoS<sub>2</sub>/p-GaSe Heterojunction Optoelectronic Devices-Reference-Cited by-同舟云学术

Influence of the Device Structure on the Electrical and Photodetector Properties of n-MoS₂/p-GaSe Heterojunction Optoelectronic Devices

Published:2023-06-27 Issue:13 Volume:6 Page:11327-11333
ISSN:2574-0970
Container-title:ACS Applied Nano Materials
language:en
Short-container-title:ACS Appl. Nano Mater.

Author:

Wu Xiaoxiang¹,Guo Wenxuan¹,Li Mengge¹,Xiao Cong¹,Ou Tianjian¹,Qiu Zhanjie¹,Wang Yewu¹²^ORCID

Affiliation:

1. Department of Physics, Zhejiang Province Key Laboratory of Quantum Technology and Devices & State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, P. R. China

2. Collaborative Innovation Centre of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R. China

Funder

Primary Research and Development Plan of Zhejiang Province

National Key Research and Development Program of China

Natural Science Foundation for Young Scientists of Shanxi Province

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsanm.3c01376

Reference32 articles.

1. 2D Photovoltaic Devices: Progress and Prospects

2. Molybdenum disulfide transistors with enlarged van der Waals gaps at their dielectric interface via oxygen accumulation

3. A review of molybdenum disulfide (MoS2) based photodetectors: from ultra-broadband, self-powered to flexible devices

4. Tunable electronic and dielectric behavior of GaS and GaSe monolayers

5. Controlled Vapor Phase Growth of Single Crystalline, Two-Dimensional GaSe Crystals with High Photoresponse

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