A mixed-dimensional quasi-1D BiSeI nanowire-2D GaSe nanosheet p–n heterojunction for fast response optoelectronic devices

Author:

Hu Huijie12,Zhen Weili1,Yue Zhilai1,Niu Rui1,Xu Feng1,Zhu Wanli1,Jiao Keke1,Long Mingsheng3ORCID,Xi Chuanying1,Zhu Wenka1ORCID,Zhang Changjin134ORCID

Affiliation:

1. High Magnetic Field Laboratory of Anhui Province, HFIPS, Chinese Academy of Sciences, Hefei 230031, China

2. Science Island Branch of Graduate School, University of Science and Technology of China, Hefei 230026, China

3. Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China

4. Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China

Abstract

Optimized design and fast response speed.

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Chinese Academy of Sciences

Publisher

Royal Society of Chemistry (RSC)

Subject

General Engineering,General Materials Science,General Chemistry,Atomic and Molecular Physics, and Optics,Bioengineering

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