Gate-Tunable Responsivity of PdSe<sub>2</sub> Nanosheet-Based Bolometric Photodetectors for Mid-Infrared Light Detection-Reference-Cited by-同舟云学术

Gate-Tunable Responsivity of PdSe₂ Nanosheet-Based Bolometric Photodetectors for Mid-Infrared Light Detection

Published:2023-09-08 Issue:18 Volume:6 Page:16970-16976
ISSN:2574-0970
Container-title:ACS Applied Nano Materials
language:en
Short-container-title:ACS Appl. Nano Mater.

Author:

Wen Shaofeng¹,Zhang Rui¹,Yang Zhuojun¹,Zhou Shuren¹,Gong Yimin¹,Fan Haodong¹,Yin Yi¹,Lan Changyong¹^ORCID,Li Chun¹^ORCID,Liu Yong¹

Affiliation:

1. State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, P. R. China

Funder

National Key Research and Development Program of China

Natural Science Foundation of Sichuan Province

National Natural Science Foundation of China

Sichuan Province Science and Technology Support Program

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsanm.3c03109

Reference40 articles.

1. Promises and prospects of two-dimensional transistors

2. Two-dimensional transistors beyond graphene and TMDCs

3. Two-dimensional materials for next-generation computing technologies

4. Graphene and two-dimensional materials for silicon technology

5. Substrate‐Free Chemical Vapor Deposition of Large‐Scale III–V Nanowires for High‐Performance Transistors and Broad‐Spectrum Photodetectors

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Mid-Infrared Spectrometer Based on Tunable Photoresponses in Pdse₂;International Journal of High Speed Electronics and Systems;2024-07-20

2. Emerging Schemes for Advancing 2D Material Photoconductive-Type Photodetectors;Materials;2023-11-27