Long-Lived Interlayer Excitons in WS<sub>2</sub>/Ruddlesden–Popper Perovskite van der Waals Heterostructures-Reference-Cited by-同舟云学术

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Long-Lived Interlayer Excitons in WS₂/Ruddlesden–Popper Perovskite van der Waals Heterostructures

Published:2024-06-27 Issue:27 Volume:16 Page:35841-35851
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Soni Ashish¹²^ORCID,Ghosal Supriya³^ORCID,Kundar Milon¹²,Pati Swapan K.³^ORCID,Pal Suman Kalyan¹²^ORCID

Affiliation:

1. School of Physical Sciences, Indian Institute of Technology Mandi, Kamand, Mandi 175005, Himachal Pradesh, India

2. Advanced Materials Research Centre, Indian Institute of Technology Mandi, Kamand, Mandi 175005, Himachal Pradesh, India

3. Theoretical Sciences Unit, School of Advanced Materials (SAMat), Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Bangalore 560064, India

Funder

Science and Engineering Research Board

Department of Science and Technology, Ministry of Science and Technology, India

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.4c07346

Reference66 articles.

1. High-performance optoelectronic devices based on van der Waals vertical MoS2/MoSe2 heterostructures

2. Large area, patterned growth of 2D MoS2 and lateral MoS2–WS2 heterostructures for nano- and opto-electronic applications

3. Ultra‐Thin GeSe/WS ₂ Vertical Heterojunction with Excellent Optoelectronic Performances

4. Recent progress in Van der Waals (vdW) heterojunction-based electronic and optoelectronic devices

5. Picosecond photoresponse in van der Waals heterostructures

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