Organic Grafting on Si for Interfacial SiO2 Growth Inhibition During Chemical Vapor Deposition of HfO2-Reference-Cited by-同舟云学术

Organic Grafting on Si for Interfacial SiO2 Growth Inhibition During Chemical Vapor Deposition of HfO2

Published:2012-08-09 Issue:16 Volume:24 Page:3135-3142
ISSN:0897-4756
Container-title:Chemistry of Materials
language:en
Short-container-title:Chem. Mater.

Author:

Dusciac Dorin¹,Brizé Virginie²,Chazalviel Jean-Noël¹,Lai Yun-Feng²,Roussel Hervé²,Blonkowski Serge³,Schafranek Robert⁴,Klein Andreas⁴,Henry de Villeneuve Catherine¹,Allongue Philippe¹,Ozanam François¹,Dubourdieu Catherine²

Affiliation:

1. Physique de la Matière Condensée, Ecole Polytechnique, CNRS, 91128, Palaiseau, France

2. Laboratoire des Matériaux et du Génie Physique, CNRS, Grenoble INP, 3 parvis L. Néel, BP 257, 38016 Grenoble, France

3. STMicroelectronics, 850 rue Jean Monnet, 38960 Crolles, France

4. Darmstadt University of Technology, Surface Science Division, Petersenstrasse 32, 64287 Darmstadt, Germany

Publisher

American Chemical Society (ACS)

Subject

Materials Chemistry,General Chemical Engineering,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/cm301247v

Reference71 articles.

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5. Materials and electrical characterization of physical vapor deposited LaxLu1−xO3 thin films on 300 mm silicon

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