The Preparation of BN-Doped Atomic Layer Graphene via Plasma Treatment and Thermal Annealing-Reference-Cited by-同舟云学术

The Preparation of BN-Doped Atomic Layer Graphene via Plasma Treatment and Thermal Annealing

Published:2014-09-16 Issue:38 Volume:118 Page:22268-22273
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Xu Jiao¹,Jang Sung Kyu¹,Lee Jieun¹,Song Young Jae¹,Lee Sungjoo¹

Affiliation:

1. SKKU Advanced Institute of Nanotechnology (SAINT), ‡Center for Human Interface Nanotechnology (HINT), and §College of Information and Communication Engineering, Sungkyunkwan University (SKKU), Suwon 440-746, Korea

Funder

National Research Foundation of Korea

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp504773h

Reference26 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils

3. Energy Band-Gap Engineering of Graphene Nanoribbons

4. Direct observation of a widely tunable bandgap in bilayer graphene

5. Band Gap Engineering of Chemical Vapor Deposited Graphene by in Situ BN Doping

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