Electrically Excited Infrared Emission from InN Nanowire Transistors-Reference-Cited by-同舟云学术

Electrically Excited Infrared Emission from InN Nanowire Transistors

Published:2007-07-07 Issue:8 Volume:7 Page:2276-2280
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Chen Jia¹,Cheng Guosheng¹,Stern Eric¹,Reed Mark A.¹,Avouris Phaedon¹

Affiliation:

1. IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, Departments of Electrical Engineering, Biomedical Engineering, and Applied Physics, Yale University, New Haven, Connecticut 06520

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/nl070852y

Reference34 articles.

1. Nanowire electronic and optoelectronic devices

2. Room-Temperature Ultraviolet Nanowire Nanolasers

3. Single-nanowire electrically driven lasers

4. Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices

5. Synthesis of p-Type Gallium Nitride Nanowires for Electronic and Photonic Nanodevices

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