Growth of nonpolar InN nanocrystal films by RF plasma-assisted evaporation technique-Reference-Cited by-同舟云学术

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Growth of nonpolar InN nanocrystal films by RF plasma-assisted evaporation technique

Published:2019-05 Issue: Volume:476 Page:418-421
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Shen Longhai,Liu Jun,Lv Wei,Wu Lijun,Qi Dongli,Zhou Yanwen,Lei Weiwei^ORCID

Funder

Scientific Research Foundation of the Technological Bureau of Shenyan and Liaoning

National Natural Science Foundation of China

Institutions of higher learning basic research projects in Liaoning province

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference24 articles.

1. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres;Taniyasu;Nature,2006

2. Room temperature ferromagnetism in new diluted magnetic semiconductor AlN: Mg nanowires;Xu;CrystEngComm,2013

3. One-Step synthesis of the pine-shaped nanostructure of aluminum nitride and its photoluminescence properties;Lei;J. Phys. Chem. C,2008

4. Scandium-doped AlN 1D hexagonal nanoprisms : a class of room-temperature ferromagnetic materials;Lei;Angew. Chem. Int. Ed.,2010

5. Growth of InN nanowires with uniform diameter on Si(111) substrates: Competition between migration and desorption of in atoms;Gao;Small.,2017

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Tree-like structures of InN nanoparticles on agminated anodic aluminum oxide by plasma-assisted reactive evaporation;Applied Surface Science;2020-02

2. Influence of low-energy ammonia ion/group diffusion on electrical properties of indium tin oxide film;Acta Physica Sinica;2020

3. The mechanism of the stability improvement of the Bγ-CsSnI3 perovskite doped with fluorine;Materials Research Express;2019-12-20

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