Room temperature ferromagnetism in new diluted magnetic semiconductor AlN:Mg nanowires-Reference-Cited by-同舟云学术

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Room temperature ferromagnetism in new diluted magnetic semiconductor AlN:Mg nanowires

Published:2013 Issue:17 Volume:15 Page:3271
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Xu Yongsheng,Yao Binbin,Liu Dan,Lei Weiwei,Zhu Pinwen,Cui Qiliang,Zou Guangtian

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2013/CE/C3CE26920E

Reference27 articles.

1. Diluted magnetic III-V semiconductors

2. Making Nonmagnetic Semiconductors Ferromagnetic

3. A window on the future of spintronics

4. Interplay between the magnetic and transport properties in the III-V diluted magnetic semiconductorGa1−xMnxAs

5. Ferromagnetic semiconductors: moving beyond (Ga,Mn)As

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1. A first-principles study on the effect of point defects on the magnetism of the AlN:Li/Na/K system;Vacuum;2023-08

2. Grain boundary-driven magnetism in aluminum nitride;Applied Physics Letters;2022-12-12

3. New nonmagnetic aliovalent dopants (Li+, Cu2+, In3+ and Ti4+): Optical and strong intrinsic room temperature ferromagnetism of perovskite BaSnO3;Journal of Alloys and Compounds;2022-12

4. Manufacturing and Properties of Ferromagnetic Aluminum Nitride Doped with Nonmagnetic Impurities;Russian Physics Journal;2022-10

5. Possible ferromagnetism or antiferromagnetism in defective AlN via strain engineering: Hybrid versus GGA calculations;Journal of Magnetism and Magnetic Materials;2022-05

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