Morphology and Growth Habit of the New Flux-Grown Layered Semiconductor KBiS<sub>2</sub> Revealed by Diffraction Contrast Tomography-Reference-Cited by-同舟云学术

Morphology and Growth Habit of the New Flux-Grown Layered Semiconductor KBiS₂ Revealed by Diffraction Contrast Tomography

Published:2022-03-31 Issue:5 Volume:22 Page:3228-3234
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Qu Kejian¹^ORCID,Bale Hrishikesh²,Riedel Zachary W.³^ORCID,Park Junehu³,Yin Leilei⁴,Schleife André³⁵^ORCID,Shoemaker Daniel P.³^ORCID

Affiliation:

1. Department of Physics and Materials Research Laboratory, University of Illinois at Urbana−Champaign, Urbana, Illinois 61801, United States

2. Carl Zeiss X-ray Microscopy Inc., Pleasanton, California 94588, United States

3. Department of Materials Science and Engineering and Materials Research Laboratory, University of Illinois at Urbana−Champaign, Urbana, Illinois 61801, United States

4. Beckman Institute, University of Illinois at Urbana−Champaign, Urbana, Illinois 61801, United States

5. National Center for Supercomputing Applications, University of Illinois at Urbana−Champaign, Urbana, Illinois 61801, United States

Funder

Basic Energy Sciences

National Science Foundation

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.2c00078

Reference54 articles.

1. Clusters, Assemble: Growth of Intermetallic Compounds from Metal Flux Reactions

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4. Epitaxial growth of topological insulator Bi2Se3 film on Si(111) with atomically sharp interface

5. In situ studies of a platform for metastable inorganic crystal growth and materials discovery

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