Epitaxial growth of topological insulator Bi2Se3 film on Si(111) with atomically sharp interface-Reference-Cited by-同舟云学术

Epitaxial growth of topological insulator Bi2Se3 film on Si(111) with atomically sharp interface

Published:2011-10 Issue:1 Volume:520 Page:224-229
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Bansal Namrata,Kim Yong Seung,Edrey Eliav,Brahlek Matthew,Horibe Yoichi,Iida Keiko,Tanimura Makoto,Li Guo-Hong,Feng Tian,Lee Hang-Dong,Gustafsson Torgny,Andrei Eva,Oh Seongshik

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference41 articles.

1. The birth of topological insulators

2. Colloquium: Topological insulators

3. The quantum spin Hall effect and topological insulators

4. Topological insulator Bi2Se3 thin films grown on double-layer graphene by molecular beam epitaxy

5. Landau Quantization of Topological Surface States inBi2Se3

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