Structure and Morphology Controlled Growth of Bismuth Selenide Films with Tunable Transport Properties on H-Passivated Si(111) by Molecular Beam Epitaxy-Reference-Cited by-同舟云学术

Structure and Morphology Controlled Growth of Bismuth Selenide Films with Tunable Transport Properties on H-Passivated Si(111) by Molecular Beam Epitaxy

Published:2024-07-05 Issue:14 Volume:24 Page:5916-5921
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Li Junye¹^ORCID,Zhao Peng¹,Liu Ting¹,Fang Chenxu¹,Sun Xueying¹,Qi Rui¹,Ji Haining¹,Wang Jianwei¹^ORCID,Li Handong¹²^ORCID,Niu Xiaobin¹,Wang Zhiming³²^ORCID

Affiliation:

1. School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu 610054, China

2. Key Laboratory of Quantum Physics and Photonic Quantum Information, Ministry of Education, University of Electronic Science and Technology of China, Chengdu 611731, China

3. Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 611731, China

Funder

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.4c00136

Reference35 articles.

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2. Synthesis of Multishell Nanoplates by Consecutive Epitaxial Growth of Bi2Se3 and Bi2Te3 Nanoplates and Enhanced Thermoelectric Properties

3. High Thermoelectric Performance in Crystallographically Textured n-Type Bi2Te3–xSex Produced from Asymmetric Colloidal Nanocrystals

4. n-Type Bi2Te3–xSex Nanoplates with Enhanced Thermoelectric Efficiency Driven by Wide-Frequency Phonon Scatterings and Synergistic Carrier Scatterings

5. Thickness-Independent Transport Channels in Topological InsulatorBi2Se3Thin Films