Scale-Dependent Optimized Homoepitaxy of InAs(111)A-Reference-Cited by-同舟云学术

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Scale-Dependent Optimized Homoepitaxy of InAs(111)A

Published:2022-08-30 Issue:10 Volume:22 Page:5958-5965
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Zelzer Steffen¹^ORCID,Batabyal Rajib¹,Dardzinski Derek²,Marom Noa²³⁴^ORCID,Grove-Rasmussen Kasper¹,Krogstrup Peter¹^ORCID

Affiliation:

1. Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark

2. Department of Materials Science and Engineering, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, United States

3. Department of Physics, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, United States

4. Department of Chemistry, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213, United States

Funder

Microsoft Research

Office of International Science and Engineering

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.2c00582

Reference37 articles.

1. Review Article: Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110)

2. Molecular beam epitaxial growth of Bi2Te3 and Sb2Te3 topological insulators on GaAs (111) substrates: a potential route to fabricate topological insulator p-n junction

3. Proposal and Experimental Demonstration of Ultrathin-Body (111) InAs-On-Insulator nMOSFETs With L Valley Conduction

4. Interface structure and luminescence properties of epitaxial PbSe films on InAs(111)A

5. High-mobility InAs 2DEGs on GaSb substrates: A platform for mesoscopic quantum transport

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Origin of surface and subband states at the InAs(111)A surface;Physical Review Materials;2023-06-20

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