NaCl-Assisted CVD Growth of Large-Area High-Quality Trilayer MoS2 and the Role of the Concentration Boundary Layer
Author:
Affiliation:
1. Department of Physics, Indian Institute of Technology Delhi, New Delhi 110016, India
2. Nanoscale Research Facility, Indian Institute of Technology Delhi, New Delhi 110016, India
Funder
University Grants Commission
Indian Institute of Technology Delhi
Ministry of Human Resource Development
Publisher
American Chemical Society (ACS)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.1c00390
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1. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
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4. Enhancement of carrier mobility in MoS2 field effect transistors by a SiO2 protective layer
5. Large and Tunable Photothermoelectric Effect in Single-Layer MoS2
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