Study of Ion Velocity Effect on the Band Gap of CVD-Grown Few-Layer MoS2
Author:
Affiliation:
1. Materials Science Group, Inter-University Accelerator Centre, New Delhi 110067, India
2. Centre for Interdisciplinary Research, University of Petroleum and Energy Studies, Dehradun 248007, Uttarakhand, India
Funder
Council of Scientific and Industrial Research, India
Publisher
American Chemical Society (ACS)
Subject
General Chemical Engineering,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/acsomega.3c05240
Reference52 articles.
1. Electronic Properties of MoS2 Nanoparticles
2. Photonics and optoelectronics of 2D semiconductor transition metal dichalcogenides
3. Strain-induced structural, elastic, and electronic properties of 1L-MoS2
4. Influence of quantum confinement on the electronic structure of the transition metal sulfideTS2
5. Small stoichiometric (MoS2)n clusters with the 1T phase
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1. Ion-irradiation induced structural, electronic, and optical properties modification in a few layered MoS2;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2024-09
2. Comparative study of electronic band gap tuning in 1L-MoSe2 and 1L-WSe2 by heterostructuring (MoSe2/WSe2), alloying (Mo W(1−)Se2) and biaxial straining;Materials Science in Semiconductor Processing;2024-07
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