Evaluation and Mitigation of Impurities in Additively Manufactured Epitaxial Gallium Nitride-Reference-Cited by-同舟云学术

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Evaluation and Mitigation of Impurities in Additively Manufactured Epitaxial Gallium Nitride

Published:2024-04-09 Issue:8 Volume:24 Page:3149-3159
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Berkson Michael A.¹^ORCID,Pogue Elizabeth A.¹,Bartlett Mairead E.¹^ORCID,Shuler Scott A.¹^ORCID,Kesavan Meera M.¹,Montalbano Timothy J.¹,Bennett-Jackson Andrew L.¹,Abraham John B.¹,Martins Isabela Z.¹,Terlier Tanguy²,Gagnon Jarod C.¹^ORCID

Affiliation:

1. Research and Exploratory Development Department, Johns Hopkins University Applied Physics Laboratory, 11100 Johns Hopkins Road, Laurel, Maryland 20723, United States

2. SIMS Laboratory, Shared Equipment Authority, Rice University, 6100 Main Street, Houston, Texas 77005, United States

Funder

Division of Civil, Mechanical and Manufacturing Innovation

Division of Chemical, Bioengineering, Environmental, and Transport Systems

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.3c01163

Reference23 articles.

1. An electron mobility model for wurtzite GaN

2. A pathway to compound semiconductor additive manufacturing

3. Oxide-growth kinetics and fractal-like patterning across liquid gallium surfaces

4. Some effects of oxygen impurities on AlN and GaN

5. Electrical and optical properties of oxygen doped GaN grown by MOCVD using N2O

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