Selective Area Deposition of Hot Filament CVD Diamond on 100 mm MOCVD Grown AlGaN/GaN Wafers-Reference-Cited by-同舟云学术

Selective Area Deposition of Hot Filament CVD Diamond on 100 mm MOCVD Grown AlGaN/GaN Wafers

Published:2019-01-04 Issue:2 Volume:19 Page:672-677
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Ahmed Raju¹^ORCID,Siddique Anwar¹,Anderson Jonathan¹,Engdahl Chris²,Holtz Mark¹³^ORCID,Piner Edwin¹³

Affiliation:

1. Materials Science, Engineering and Commercialization Program, Texas State University, San Marcos, Texas 78666, United States

2. Crystallume Inc., 3397 De La Cruz Boulevard, Santa Clara, California 95054, United States

3. Department of Physics, Texas State University, San Marcos, Texas 78666, United States

Funder

Army Research Office

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.8b01260

Reference25 articles.

1. GaN-Based RF Power Devices and Amplifiers

2. Nanocrystalline Diamond Integration with III-Nitride HEMTs

3. Achieving the Best Thermal Performance for GaN-on-Diamond

4. Reducing GaN-on-diamond interfacial thermal resistance for high power transistor applications

5. Blevins, J. D.; Via, G. D.; Sutherlin, K.; Tetlak, S.; Poling, B.; Gilbert, R.; Moore, B.; Hoelscher, J.; Stumpff, B.; Bar-Cohen, A.; Maurer, J. J. Recent Progress in GaN-on-Diamond Device Technology. CS MANTECH Conference, May 19–22, Denver, Colorado; 2014; pp 105–108.

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