Stabilizing Ir(001) Epitaxy on Yttria-Stabilized Zirconia Using a Thin Ir Seed Layer Grown by Pulsed Laser Deposition-Reference-Cited by-同舟云学术

Stabilizing Ir(001) Epitaxy on Yttria-Stabilized Zirconia Using a Thin Ir Seed Layer Grown by Pulsed Laser Deposition

Published:2016-12-02 Issue:1 Volume:17 Page:89-94
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Fan Lisha¹,Jacobs Christopher B.¹,Rouleau Christopher M.¹,Eres Gyula¹

Affiliation:

1. Materials Science and Technology Division, and Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States

Funder

Basic Energy Sciences

Laboratory Directed Research and Development

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.6b01267

Reference30 articles.

1. Epitaxial graphene on ruthenium

2. Epitaxial graphene prepared by chemical vapor deposition on single crystal thin iridium films on sapphire

3. Material Properties of Heteroepitaxial Ir and Pb(ZrxTi1-x)O3Films on (100)(ZrO2)1-x(Y2O3)x/(100)Si Structure Prepared by Sputtering

4. Reduction of mosaic spread using iridium interlayers: A route to improved oxide heteroepitaxy on silicon

5. Why is iridium the best substrate for single crystal diamond growth?

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