P–N Junctions in Ultrathin Topological Insulator Sb2Te3/Bi2Te3 Heterostructures Grown by Molecular Beam Epitaxy
Author:
Affiliation:
1. Peter Grünberg Institut and Jülich Aachen Research Alliance (JARA-FIT), Forschungszentrum Jülich, 52425 Jülich, Germany
2. Institute for Applied Physics (PSN), Technische Universiteit Eindhoven, 5600 MB Eindhoven, The Netherlands
Funder
Helmholtz Association
Deutsche Forschungsgemeinschaft
Publisher
American Chemical Society (ACS)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.5b01717
Reference21 articles.
1. The birth of topological insulators
2. Effective continuous model for surface states and thin films of three-dimensional topological insulators
3. Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface
4. Controlling Bulk Conductivity in Topological Insulators: Key Role of Anti-Site Defects
5. Substitutional defects in Sb2Te3 crystals
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