Extenuation of Stress and Defects in GaN Films Grown on a Metal–Organic Chemical Vapor Deposition-GaN/c-Sapphire Substrate by Plasma-Assisted Molecular Beam Epitaxy
Author:
Affiliation:
1. Academy of Science & Innovative Research (AcSIR), CSIR-NPL Campus, Dr. K.S. Krishnan Road, New Delhi 110012, India
Funder
Council of Scientific and Industrial Research
Publisher
American Chemical Society (ACS)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.5b00125
Reference41 articles.
1. Semiconductor Nanowires for Subwavelength Photonics Integration
2. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures
3. Transferable GaN Layers Grown on ZnO-Coated Graphene Layers for Optoelectronic Devices
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