Demonstration of (In, Ga)N/GaN Core–Shell Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy on Ordered MOVPE GaN Pillars-Reference-Cited by-同舟云学术

Demonstration of (In, Ga)N/GaN Core–Shell Micro Light-Emitting Diodes Grown by Molecular Beam Epitaxy on Ordered MOVPE GaN Pillars

Author:

Albert Steven¹,Bengoechea-Encabo Ana¹,Ledig Johannes²,Schimpke Tilman³,Sánchez-Garcia Miguel A.¹,Strassburg Martin³,Waag Andreas²,Calleja Enrique¹

Affiliation:

1. ISOM and Dept. Ingeniería Electrónica, ETSI Telecomunicación, Universidad Politécnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid, Spain

2. Institute of Semiconductor Technology, Braunschweig University of Technology, Hans-Sommer-Straβe 66, 38106 Braunschweig, Germany

3. Osram Opto Semiconductors GmbH, Leibnizstraβe 4, 93055 Regensburg, Germany

Funder

Ministerio de Ciencia e Innovaci?n

Seventh Framework Programme

Comunidad de Madrid

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

Reference32 articles.

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