Electric-Field Enhanced Ni Induced Lateral Crystallization Rate Saturation in Heavily Phosphorus-Doped Amorphous Silicon
Author:
Affiliation:
1. Nano Device Laboratory, Sejong University, 98 Gunja-dong, Gwangjin-gu, Seoul 143-747, Korea
2. School of Materials Science and Engineering, Seoul National University, San 56-1, Shinrim-Dong, Kwanak-gu, Seoul 151-742, Korea
Funder
National Research Foundation of Korea
Department of Science and Technology, Ministry of Science and Technology
Publisher
American Chemical Society (ACS)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.5b01158
Reference25 articles.
1. Giant-grain silicon (GGS) and its application to stable thin-film transistor
2. A comparison of grain nucleation and grain growth during crystallization of HWCVD and PECVD a-Si:H films
3. UV Pulsed Laser Annealing of Si+Implanted Silicon Film and Low-Temperature Super-Thin Film Transistors
4. Recrystallization of amorphized polycrystalline silicon films on SiO2: Temperature dependence of the crystallization parameters
Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Crystallization characteristics in heavily B2H6-doped amorphous Si thin films;Journal of Alloys and Compounds;2019-09
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3